Comparison of Heat Sinks in Back-End of Line to reduce Self-Heating in 22FDX® MOSFETs

Arka Halder,Lucas Nyssens,Dimitri Lederer,Valeriya Kilchytska,Jean-Pierre Raskin

Solid-State Electronics（2023）

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摘要

•Efficacy of heat removal from channel by different heat sinks in back-end of line studied.•Lowering of thermal resistance demonstrated with increasing sink dimensions.•Tradeoff between RF performance and self-heating reduction needed.•fT degraded more due to increased gate capacitance, fmax lesser due to reduced gate resistance.

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关键词

heat sinks,back-end,self-heating

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