Growth of the new high-performance NLO crystal BaGa2GeSe6 via the controlled vapor pressure method

BaGa2GeSe6, a new nonlinear optical (NLO) crystal with various advantages, has important applications in environmental monitoring, medical diagnosis, infrared countermeasures and some other areas. In this paper, the high purity polycrystalline charges were synthesized by two-temperature-zone method. Using synthesized polycrystal, BaGa2GeSe6 single crystals with size of CYRILLIC CAPITAL LETTER EF15mm x 50 mm were grown successfully by the controlled vapor pressure method (CVP) for the first time. As large as 6 x 10 x 21 mm3 sample was fabricated from the asgrown crystal. The BaGa2GeSe6 crystal was characterized and analyzed by thermal analysis, chemical composition, and transmission spectra etc. A new method was provided to grow the new high-performance crystal BaGa2GeSe6, and it is meaningful for preparing other similar crystals.