Reply to: Mobility overestimation in MoS2 transistors due to invasive voltage probes

In this reply, we include new experimental results and verify that the observed non-linearity in rippled-MoS2 (leading to mobility kink) is an intrinsic property of a disordered system, rather than contact effects (invasive probes) or other device issues. Noting that Wu's model is based on a highly ordered ideal system, transfer curves are expected to be linear, and the carrier density is assumed be constant. Wu's model is therefore oversimplified for disordered systems and neglects carrier-density dependent scattering physics. Thus, it is fundamentally incompatible with our rippled-MoS2, and leads to the wrong conclusion.