Black Phosphorus/Ferroelectric P(VDF-TrFE) Field-Effect Transistors with High Mobility for Energy-Efficient Artificial Synapse in High-Accuracy Neuromorphic Computing

The neuromorphic system is an attractive platform fornext-generationcomputing with low power and fast speed to emulate knowledge-basedlearning. Here, we design ferroelectric-tuned synaptic transistorsby integrating 2D black phosphorus (BP) with a flexible ferroelectriccopolymer poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)).Through nonvolatile ferroelectric polarization, the P(VDF-TrFE)/BPsynaptic transistors show a high mobility value of 900 cm(2) V-1 s(-1) with a 10(3) on/off current ratio and can operate with low energy consumptiondown to the femtojoule level (similar to 40 fJ). Reliable and programmablesynaptic behaviors have been demonstrated, including paired-pulsefacilitation, long-term depression, and potentiation. The biologicalmemory consolidation process is emulated through ferroelectric gate-sensitiveneuromorphic behaviors. Inspiringly, the artificial neural networkis simulated for handwritten digit recognition, achieving a high recognitionaccuracy of 93.6%. These findings highlight the prospects of 2D ferroelectricfield-effect transistors as ideal building blocks for high-performanceneuromorphic networks.