Assessment of the variability of the I-V characteristic of HfO2-based resistive switching devices and its simulation using the quasi-static memdiode model

•The inclusion of uncorrelated cycle to cycle variability in the quasistatic memdiode model for RRAM devices is studied in this work.•The experimental parameter distributions suiting better are determined by means of the tools in the fitdistrplus package for the R language.•Model results reproduce the main features exhibited by the experimental curves.•Statistical distributions from experimental and simulated parameters are compared including the study of the parameter fluctuations.•The model was studied with a one-way sensitivity analysis, where the impact of variations in the model parameters have in the model outputs was assessed.