Analysis of trap distribution and NBTI degradation in Al2O3/SiO2 dielectric stack

•The thin Al2O3/SiO2 as gate dielectric stack is a good candidate to replace SiO2 in CMOS technology node 65 nm and beyond.•The trap state density and energy level distribution in the silicon bandgap are extracted by conductance method.•The selection of the fabrication process optimizes the interface trap density and dielectric reliability (NBTI) of thin Al2O3/SiO2 gate dielectric stack.