Potential structure of c-Si bottom sub-cell in bifacial four-terminal III-V//c-Si multijunction devices

Duy Phong Pham,Seungyong Han,Minh Phuong Nguyen, Hyun-Beom Shin,Ho Kwan Kang,Youngkuk Kim,Junsin Yi

Solar Energy（2023）

引用 0|浏览1

暂无评分

摘要

•4-terminal III-V//c-Si multijunction device with a TOPCon bottom cell.•Wide-gap poly-SiOx as back surface field for TOPCon device.•Bifacial illumination of the 4-terminal device is examined.•Over 34% of cell efficiency with extra 0.25-sun illumination at the back.

查看译文

关键词

sub-cell,four-terminal

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要