3D integration technologies for custom SiPM: From BSI to TSV interconnections

L. Parellada-Monreal,F. Acerbi, A. Ficorella, A. Franzoi,A. Gola, S. Merzi, A. Nawaz, M. Ruzzarin,G. Paternoster

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment（2023）

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摘要

Progress in 3D interconnecting technologies paved the way for a new generation of Silicon Photomultipliers (SiPM) and Single Photon Avalanche Diode (SPAD): hybrid devices which combine the integrated functionalities of the digital SiPM with the high performance of custom technologies, like low noise and high detection efficiency. Recently, Fondazione Bruno Kessler (FBK) has been working on the implementation of recently developed 3D integration technologies, on SiPMs devices, to improve both performances and functionalities by creating backside-illuminated (BSI) devices and Through Silicon Vias (TSV) interconnections.

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关键词

SiPM, 3D integration, Backside-illuminated, Through Silicon Vias, Hybrid-SiPM, SPAD-array

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