Influence of temperature on measurements of the Two Photon Absorption – Transient Current Technique in silicon planar detectors using a 1550 nm femtosecond fibre laser
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment(2023)
Abstract
The effect of temperature on the excess charge carrier generation and collection, injected using two photon absorption at a wavelength of 1550 nm, is investigated in a 285 μm thick, p-type silicon planar detector, with a bulk resistivity of 3.7 kΩ cm. Charge collection measurements are performed for temperatures between −20 °C to 20 °C. The collected charge decreases by about 8% when the temperature is lowered from 20 °C to −20 °C, which is linked to a decreasing excess charge carrier generation. Further, a decreasing time over threshold is observed for decreasing temperatures, which is associated to an increasing charge carrier mobility.
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Key words
Solid state detectors,Solid state detector characterisation,Two Photon Absorption-Transient Current Technique
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