Nucleation and growth of graphene at different temperatures by plasma enhanced chemical vapor deposition

Temperature plays an important role in the synthesis of graphene by chemical vapor deposition. In the low-temperature plasma-enhanced chemical vapor deposition (PECVD) process, although the cleavage of hydrocarbon precursor no longer depends on growth temperature, which can affect the nucleation and growth of graphene by the diffusion and adsorption of active species, the catalytic ability of substrate and other factors, and ultimately lead to various growth of graphene. In this paper, the nucleation and growth of graphene at different temperatures by PECVD were studied. We noted that the nucleation and growth of graphene varied greatly in different temperature zones. Graphene could not be grown at low temperatures (< 600 ℃). At the medium and low temperature (650 ∼ 800 ℃), high nucleation density of graphene with nanometer size were produced. In the middle and high temperature region (850 ∼ 900 ℃), larger grains of graphene grown, and in the high temperature region (> 950 ℃), the coexistence of large and small grains was finally formed. In addition, the models of the nucleation and growth of graphene in different temperature zones were proposed.