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Temperature Dependent Growth of InAs/InAsSb Superlattices by Molecular Beam Epitaxy for HOT Mid-Wavelength Infrared Detectors

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING(2023)

Cited 5|Views3
Key words
InAs,InAs 1,x Sb x superlattice,Molecular beam epitaxy,Mid-wavelength infrared,Temperature dependence,Photoluminescence
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