AlInGaN nanocrystal seeded growth of weak p-type -(In_0.1Ga_0.9)₂O₃ nanowires and nanobelts

The controlled growth of single-crystalline (InxGa1-x)(2)O-3-based materials with high indium content is still a big challenge due to the large solid-phase miscibility gap, unclear growth mechanism, and the lack of seed epitaxial layers with appropriate lattice structures. In this study, Al0.2In0.2Ga0.6N seed nanocrystals self-organized around Pt catalysts are employed as a seed epitaxial layer to grow single-crystalline beta-(In0.1Ga0.9)(2)O-3 nanowires and nanobelts. The growth mechanisms of single-crystalline beta-(In0.1Ga0.9)(2)O-3 nanowires and nanobelts are clarified by X-ray diffraction, scanning electron microscopy, and high-resolution transmission electron microscopy. The epitaxial relationship of (201) beta-(In0.1Ga0.9)(2)O-3 on (0001) Al0.2In0.2Ga0.6N is demonstrated according to XRD and TEM observations. Weak p-type properties are observed in beta-(InxGa1-x)(2)O-3 nanowires and nanobelts, attributed to the presence of an acceptor level from Ga vacancies, N impurities, and V-Ga-N-O complexes.