Theoretical studies on intrinsic electron traps in strained amorphous silica
JOURNAL OF NON-CRYSTALLINE SOLIDS(2023)
摘要
Charge trapping in amorphous silica (a-SiO2) dielectric layer can degrade electrical performances of semicon-ductor devices. Earlier studies demonstrate that a SiO4 tetrahedra unit with a wide O-Si-O angle (>= 132.0 degrees) can act as an electron trapping site in unstrained a-SiO2 cells. With first-principle calculations, in conjunction with molecular dynamic calculations, this work investigates the impacts of uniaxial tensile strain on one-electron trapping behaviors of a-SiO2, including atomic configurations and electronic properties. Stable states of strained a-SiO2 cells with an extra electron indicate that a SiO4 with a wide O-Si-O angle (>= 132.0 degrees) and a long Si-O bond (>= 1.660 for all) making up the angle can act as a novel intrinsic electron tap. An electron trapping on this trap can generate a stable defect complex with two components: a negatively charged non-bridging oxygen hole center and a neutral oxygen vacancy with an unpaired electron.
更多查看译文
关键词
strained amorphous silica,intrinsic electron traps
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要