Low-temperature solution-processed LaNiO3 hole-transport layer for UV-stable inverted perovskite solar cells

We report a solution-processing method to prepare an inorganic LaNiO3 (LNO) hole-transport layer (HTL) under low temperature (<150 degrees C) for the first time. The inverted PSCs prepared with LNO exhibit high UV-stability and promising efficiency (17.15%). Our preliminary results show great potential for LNO HTL in the fabrication of efficient and photostable inverted perovskite solar cells (PSCs).