VO₂ layers with high resistive switching ratio by atomic layer deposition

The present work explores the atomic layer deposition (ALD) of VO2 layers for resistive switching applications. Tetrakis (ethylmethylamino)vanadium (TEMAV) precursor was used combined with different oxidants, deposition temperatures, and annealing procedures, and the structural and electrical properties of the layers were analysed. All the as-deposited layers were amorphous, but an annealing in oxygen containing atmosphere at temperatures exceeding 400 degrees C yielded pure and crystalline VO2 layers. The thus prepared films are compact with crystallite sizes between 50 and 100 nm, displaying excellent electrical switching properties, with their resistivity decreasing 3 orders of magnitude at 68 degrees C.