谷歌浏览器插件
订阅小程序
在清言上使用
VIPCreated with Sketch.

Performance Improvement with Non-Alloyed Ohmic Contacts Technology on AlGaN/GaN High Electron Mobility Transistors on 6H-Sic Substrate

Marie Lesecq,Yassine Fouzi,Ali Abboud,Nicolas Defrance,Francois Vaurette,Saliha Ouendi,Etienne Okada,Marc Portail,Micka Bah,Daniel Alquier,Jean-Claude De Jaeger,Eric Frayssinet,Yvon Cordier

Microelectronic Engineering（2023）

引用 0|浏览2
关键词
HEMT,GaN,Regrown ohmic contacts
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要