Power Performance of AlGaN/GaN High-Electron-Mobility Transistors with AlN Buffer on SiC Substrate at 3.5 GHz

Herein, a 3.5 GHz (S-band) power performance is reported on an AlGaN/GaN high-electron-mobility transistor (HEMT) with AlN buffer on SiC substrate. A 4 inch epi-wafer is grown by high-temperature metal-organic chemical vapor deposition. The fabricated devices with a 400 nm gate and direct current and radio-frequency (RF) characteristics are examined. These device shows a transconductance of 233 mS mm(-1) and a maximum drain current of 820 mA mm(-1). The pulsed current-voltage (I-V) characteristic shows a low slump ratio with a 0.36% and 2.2% for Z(1) and Z(2), respectively. The power performance shows output power = 5.5 W mm(-1) with 54.3% power added efficiency, and V-DS was 50 V. The potential of an AlN buffer HEMT is demonstrated by the results for use in next-generation high-power RF devices.