Strain Effectiveness of Gate-all-around Silicon Nanowire n-MOSFET Transistors with Physical Analysis

Abstract In this paper, we have discussed the effects of uniaxial tensile strain on the performance of gate-all-around (GAA) n-MOSFETs over the core cell SiGe structure are investigated for nanowire (NW) channel down to 5 nm to 10 nm. The strain has shown an increase in current drain due to a decrease in the energy bandgap in the SiNWs which stretched beyond their normal interatomic distance. The surface potential gate to source voltage (-0.5 to 0.5 V), drain voltage (0 to 2 V), donor concentration (107cm−3 to 1014cm−3), acceptor concentration (1017cm−3 to 1022cm−3), and operating temperature (0 to 300 K) with varying channel length were investigated. Matlab code is used to employ the GAA strained-Si MOSFETs show excellent subthreshold swing and cutoff behavior, and approximately two times current drive and intrinsic transconductance enhancement compared to similar unstrained Si devices.