Ultra-Dense 3D Physical Design Unlocks New Architectural Design Points with Large Benefits

This paper focuses on iso-on-chip-memory-capacity and iso-footprint Energy-Delay-Product (EDP) benefits of ultra-dense 3D, e.g., monolithic 3D (M3D), computing systems vs. corresponding 2D designs. Simply folding existing 2D designs into corresponding M3D physical designs yields limited EDP benefits (similar to 1.4x). New M3D architectural design points that exploit M3D physical design are crucial for large M3D EDP benefits. We perform comprehensive architectural exploration and detailed M3D physical design using foundry M3D process design kit and standard cell library for front-end-of-line (FEOL) Si CMOS logic, on-chip back-end-of-line (BEOL) memory, and a single layer of on-chip BEOL FETs. We find new M3D AI/ML accelerator architectural design points that have iso-footprint, iso-on-chip-memory-capacity EDP benefits ranging from 5.3x to 11.5x vs. corresponding 2D designs (containing only FEOL Si CMOS and on-chip BEOL memory). We also present an analytical framework to derive architectural insights into these benefits, showing that our principles extend to many architectural design points across various device technologies.