Synthesis and properties of carbon nitride materials

Carbon nitrides (C3N4) are renowned organic semiconductors with a band gap of 2.7 eV, which are connected via tri-s-triazine-based forms. Compared to the different existing carbon materials, C3N4 possess hydrogen-bonding motifs, basic surface functionalities owing to the presence of nitrogen (N) and hydrogen (H) atoms, and electron-rich properties. Therefore, carbon nitride is considered a potential candidate for carbon supplementation in material applications. In this chapter, an introduction to carbon nitride is given, and different synthesis methods to produce g-C3N4 (graphitic C3N4) and its physicochemical properties are presented. We hope this chapter will motivate researchers and open up new avenues for various applications in photocatalytic activities, such as carbon dioxide (CO2) reduction and water splitting, and ecological indemnification via the elimination of organic contaminants.