16 × 16 Solar-Blind UV Detector Based on β-Ga₂O₃ Sensors

In this work, a ${16}\times {16}$ Ga ₂ O ₃ photodetector array is introduced. The Ga ₂ O ₃ thin film was deposited on ${c}$ -sapphire substrate by employing metal-organic chemical vapor deposition, and the array device was constructed via UV photolithography, lift-off and electron-beam evaporation techniques. The high rejection ratio of ${8}\times {10} ^{{3}}$ indicate good wavelength selectivity. The photodetector displayed responsivity of 60.7 A W ⁻¹ , specific detectivity of ${2}.{2}\times {10} ^{{14}}$ cm $\sqrt {\textit {Hz}}\,\,\text{W}^{-{1}}$ (Jones), external quantum efficiency of ${3}\times {10} ^{{4}}$ %, linear dynamic region of 120.34 dB, respectively. Excited by a laser, the photodetector had a rise time of 6 ms and a decay time of 48 ms, suggesting a fast response ability for tracing light signal. For the 256 pixels in this array, the dark current locates from 2 pA to 4 pA, and shown no disparity. More than 75% of the units have a maximum standard deviation of less than 10%. This work could show a guidance for advancing the solar-blind UV sensing devices and further applications.