Reducing breakthrough dislocation toward Si/SiGe heterostructure to improve advanced HKMG SRAM device performance by optimizing fluorine co-implantation

Y. L. Chin, Y. S. Lin, Y. C. Hu, M. H. Chang, T. W. Yu, W. T. Chen, C. Y. Yang, Y. J. Lin,C. C. Chien, J. Y. Wu

2014 International Workshop on Junction Technology (IWJT)（2014）

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