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排名必读论文期刊顶会热点AI 简史溯源树小脉星探人才迁徙塔尖人才国防情报追踪开源工具智慧手语
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AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices

James Spencer Lundh,Hannah N. Masten,Kohei Sasaki,Alan G. Jacobs,Zhe Cheng,Joseph Spencer, Lei Chen,James Gallagher,Andrew D. Koehler,Keita Konishi,Samuel Graham,Akito Kuramata,Karl D. Hobart,Marko J. Tadjer

2022 Device Research Conference (DRC)（2022）

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