Influence of Ionizing Radiation on the Parameters of P-Channel MOS Transistors

Yu. V. Bogatyrev, D. A. Aharodnikau,S. B. Lastovsky, A. V. Ket’ko, M. M. Krechko, S. V. Shpakovsky, P. V. Rubanov,G. A. Protopopov,P. A. Chubunov

Proceedings of the National Academy of Sciences of Belarus, Physical-Technical Series（2023）

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