First Demonstration of Dual-Gate IGZO 2T0C DRAM with Novel Read Operation, One Bit Line in Single Cell, ION=1500 Μa/μm@vds=1v and Retention Time>300s
2022 International Electron Devices Meeting (IEDM)（2022）
Key words
bit-line,DG IGZO FET,DG scheme,Dual-Gate IGZO 2T0C DRAM,gate-controlled read scheme,high density IGZO 2T0C DRAM application,InGaZnO/int,novel dual-gate IGZO 2T0C,novel read operation,single cell,size 13.9 nm,time 300.0 s,ultra-scaled DG IGZO transistor,voltage 1.0 V
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