Direct Quantitative Extraction of Internal Variables from Measured PUND Characteristics Providing New Key Insights into Physics and Performance of Silicon and Oxide Channel Ferroelectric FETs
2022 International Electron Devices Meeting (IEDM)（2022）
关键词
carrier density,channel defect generation,charge emission,defect density,device physics,direct quantitative extraction,EBDs,external bias point,FECAP,ferroelectric capacitor P-V data,internal device quantities,internal distributed variables,lifetime limitations,measured PUND characteristics,oxide channel ferroelectric FETs,permanently trapped charge,polarization switching,polarization walkout,positive-up negative-down FeFET,quantitative energy band diagrams,read delay,Si/int,stress induced memory window closure
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