3-Layer Stacked Voltage-Domain Global Shutter CMOS Image Sensor with 1.8Μm-Pixel-pitch

Seung-Sik Kim,Gwi-Deok Ryan Lee,Sang-Su Park,Heesung Shim,Dae-Hoon Kim, Minjun Choi, Sangyoon Kim, Gyunha Park,Seung-Jae Oh,Joosung Moon,Sungbong Park,Sol Yoon,Jihye Jeong, Sejin Park,Sanggwon Lee,HaeJung Lee, Wonoh Ryu,Taehyoung Kim,Doowon Kwon,Hyuk Soon Choi,Hongki Kim,Jonghyun Go,JinGyun Kim,Seunghyun Lim,HoonJoo Na,Jae-Kyu Lee,Chang-Rok Moon,Jaihyuk Song

2022 International Electron Devices Meeting (IEDM)（2022）

Cited 2|Views1

Key words

3-layer stacked voltage-domain global shutter CMOS image sensor,Cu-Cu/int,DRAM capacitors,dual vertical-channel transfer gates,floating diffusion node,pixel-level Cu-to-Cu bonding processes,ultralow parasitic light sensitivity

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