First Demonstration of Dual-Gated Indium Tin Oxide Transistors with Record Drive Current ~2.3 mA/μm at L ≈ 60 nm and V_DS = 1 V

Sumaiya Wahid, Alwin Daus,Aravindh Kumar, H.-S. Philip Wong, Eric Pop

2022 International Electron Devices Meeting (IEDM)（2022）

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First Demonstration of Dual-Gated Indium Tin Oxide Transistors with Record Drive Current ~2.3 mA/μm at L ≈ 60 nm and VDS = 1 V