Engineering Defects in Pristine Amorphous Chalcogenides for Forming-Free Low Voltage Selectors

E. Ambrosi,C. H. Wu,H. Y. Lee, C. F. Hsu,C. M. Lee,S. Vaziri,I. M. Datye,Y. Y. Chen,D. H. Hou,P. C. Chang, D. W. Heh,P. J. Liao,T. Y. Lee,M. F. Chang,H. -S. P. Wong,X. Y. Bao

2022 International Electron Devices Meeting (IEDM)（2022）

引用 5|浏览12

关键词

amorphous chalcogenide-based threshold selectors,engineering defects,forming voltage,forming-free chalcogenide selector process,forming-free low voltage selectors,high density nonvolatile memories,low voltage logic chips,pristine amorphous chalcogenides,SiNGeCTe chalcogenide,SiNGeCTe/ss,SNGCT chalcogenide,switching pulse operation,two-terminal technologies

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