The effect of γ-ray irradiation on voltage-controlled magnetism of HfZrO/CoFeB Hall bar device

Wei Cao,Jia Chen,Peiyue Yu,Lei Zhao,Yanru Li,Meiyin Yang,Jing Xu,Jianfeng Gao,Bingjun Yang,Lei Yue,Zuo Chao,Yan Cui,Jun Luo

SSRN Electronic Journal（2023）

引用 0|浏览3

暂无评分

摘要

•Total ionizing dose effect on the voltage-controlled magnetic anisotropy Hall bar device based on HfZrO/CoFeB hybrid film.•Voltage-controlled magnetic anisotropy effect is enhanced with the accumulation of irradiation dosage.•The proposed mechanism focus on interfacial trapped charges.•HfZrO/CoFeB hybrid film possess potential for radiation-hard memory.

查看译文

关键词

Voltage-controlled magnetism,Total ionizing dose effect,Ferromagnetic hybrid film

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要