First-principles investigation on structural and optoelectronic properties of buckled SnO monolayer for effective solar energy scavenging

•DFT investigation of buckled SnO monolayer for energy scavengeing.•Buckled SnO monolayer is an indirect semiconductor with electronic bandgap of 1.71 eV.•Absorption peak at 1.93 eV signifies the visible light absorption.•Outstanding light absorption ability with excellent 16.76% solar power conversion efficiency.