Direct Observation of an Atomic Thin Inversion Layer at the Native Oxide/ N-Si Interface
2022 IEEE 49th Photovoltaics Specialists Conference (PVSC)（2022）
关键词
air-annealing,atomic oxidation,atomic thin hole inversion layer,atomic thin inversion layer,commensurate adjacent thin film phase transition,concentrated surface electric field,energy band,facile processing,induced inversion layer,InSnO/int,interfacial charge engineering,lattice matching,native oxide semiconductor interface,photocarrier recombination,recombination-free high-quality interface,semiconductor solar cells,Si/int,surface inversion layer,transmission electron microscopy,ultra-low recombination rate,work functions
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