Emerging field effect transistor architectures—part I

The recent advancements in electronic devices have a significant impact on our dailylife. This undeniable impact of electronic devices is due to the continuous performance improvements in the metal-oxide-semiconductor field-effect transistor (MOSFET) as the building block of integrated circuits, following Moore’s law. The scaling of MOSFET dimensions enables integration of high density of transistors in a chip, functionality improvement, and a low-cost manufacturing process. However, as the MOSFET feature size is being minimized to atomic dimensions, special effects named “Short Chanel Effects” slow down the scaling trend. In this chapter, we consider some of the emerging devices, including Reconfigurable Schottky Barrier Field Effect Transistor (FET), Spin FET, Vertical Tunnel FET, and Electron-Hole Bilayer Tunnel FET, as the potential candidates for the conventional MOSFET. These devices are compatible with existing semiconductor technology and offer superior electrical characteristics, which can provide new circuit designs for future logic circuits.