Raman spectrа of silicon/germanium alloy thin films based on porous silicon
Journal of Applied Spectroscopy(2022)
摘要
The regularities of composition changes of silicon/germanium alloy thin films formed on a monocrystalline silicon substrate by electrochemical deposition of germanium into a porous silicon matrix with subsequent rapid thermal annealing (RTA) at a temperature of 750–950°C are studied. An analysis of the samples by Raman spectroscopy showed that an increase of RTA temperature leads to a decrease in the germanium concentration in the formed film. A decrease of the RTA duration at a given temperature makes it possible to obtain films with a higher concentration of germanium and to control the composition of thin silicon/germanium alloy films formed by changing the temperature and duration of RTA. The obtained results on controlling the composition of silicon/germanium alloy films can be used to create functional electronic devices, thermoelectric power converters, and optoelectronic devices.
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关键词
porous silicon/germanium,thin films,alloy
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