Исследование квантовых ям InP/GaP, полученных методом газофазной эпитаксии

А.И. Баранов,А.В. Уваров,А.А. Максимова, Е.А. Вячеславова, Н.А. Калюжный,С.А. Минтаиров,Р.А. Салий, Г.Е. Яковлев, В.И. Зубков,А.С. Гудовских

Письма в журнал технической физики（2023）

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Abstract

We consider structure with single quantum well InP 5 nm thick grown by vapor phase epitaxy on n-GaP wafer. By classical capacitance-voltage profiling of Schottky diode on sample and electrochemical profiling, electron accumulation were detected in InP layer so existence of quantum well is confirmed. Results of admittance spectroscopy and deep-level transient spectroscopy showed defect formation in GaP layers above InP with energy position of Ec-0.21 eV, 0.30 eV и 0.93 eV.

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Key words

газофазной эпитаксии,исследование,полученных,inp/gap,inp/gap

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