Using compact model to verify IGZO RO performance for engineering application

Since IGZO was invented by Kimizuka from 1985, 2D and 3D front and back gate IGZO transistors had been used. As integrated circuit becomes more complex, the device and SPICE models play the key role between manufacturing and circuit designer, one of the most advanced surface-potential based compact model of IGZO is introduced and verified from process variation and ring oscillator circuit performance in this paper for the engineering application in the future.