Design and Demonstration of a Medium-Voltage Silicon Carbide ANPC Power Stage

In this paper, the design of a high-power medium-voltage (MV) active-neutral-point-clamped (ANPC) converter using the 1.7kV silicon carbide (SiC) MOSFET modules is presented. How to achieve a low stray inductance design while meeting voltage insulation requirements are the challenges addressed in this work through the use of a three-dimensional (3D) busbar design approach. In addition, various resonant frequency measurement methods are investigated, leading to an accurate current commutation loop inductance extraction from the voltage ringing of the device. Experimental studies are performed using two ANPC power stages in a pump-back configuration to verify the performance of the proposed design.