Room temperature spin-orbit torque efficiency and magnetization switching in SrRuO3 -based heterostructures

Spin-orbit torques (SOTs) from transition metal oxides (TMOs) in conjunction with magnetic materials have recently attracted tremendous attention for realizing high-efficient spintronic devices. ${\mathrm{SrRuO}}_{3}$ is a promising candidate among TMOs due to its large and tunable SOT efficiency as well as high conductivity and chemical stability. However, a further study for benchmarking the SOT efficiency and realizing SOT-driven magnetization switching in ${\mathrm{SrRuO}}_{3}$ is still highly desired so far. Here, we systematically study the SOT properties of high-quality ${\mathrm{SrRuO}}_{3}$ thin film heterostructuring with different magnetic alloys of both IMA and PMA configuration by the harmonic Hall voltage technique. Our results indicate that ${\mathrm{SrRuO}}_{3}$ possesses pronounced SOT efficiency of about 0.2 at room temperature regardless of the magnetic alloys, which is comparable to typical heavy metals (HMs). Furthermore, we achieve SOT-driven magnetization switching with a low threshold current density of $3.8\ifmmode\times\else\texttimes\fi{}{10}^{10}\phantom{\rule{0.28em}{0ex}}\mathrm{A}/{\mathrm{m}}^{2}$, demonstrating the promising potential of ${\mathrm{SrRuO}}_{3}$ for practical devices. By making a comprehensive comparison with HMs, our work unambiguously benchmarks the SOT properties and concludes the advantages of ${\mathrm{SrRuO}}_{3}$, which may bring more diverse choices for SOT applications by utilizing hybrid-oxide/metal and all-oxide systems.