Molecular Beam Epitaxy of Mixed h -GaTe/ m -GaTe Thin Films on GaAs(001) Substrates: Structural and Photoluminescence Properties

Thin GaTe films were grown by molecular beam epitaxy (MBE) on GaAs(001) substrates. X-ray powder diffraction confirmed the coexistence of the h - and m -GaTe phases in all grown layers. A quantitative correlation between the MBE growth conditions and the phase composition of the grown films is established, and the upper limit of the MBE growth temperature for thin GaTe/GaAs(001) films is experimentally determined. New data are presented confirming the defect-related origin of the broad emission line with an energy maximum of ~1.45–1.46 eV, which dominates the low-temperature photoluminescence spectra of the grown GaTe/GaAs(001) layers.