2D imaging technique for quantitative and qualitative characterisation of high-resistivity GaN semiconductor wafers for light and power electronics

In this work an automatic SPDR scanner is applied to 2D surface imaging of electrical parameters of GaN semiconductor wafer. The homogeneity of electrical parameters of GaN template is crucial for light and power electronics allowing for enhancing packaging efficiency and obtaining high quality and repeatability of resulting devices. For the first time, the new 10GHz SPDR scanner is applied to obtain 2D resistivity map of GaN template delivering both, quantitative and qualitative measure of inhomogeneities of the semiconductor structure.