A NOVEL PIEZORESISTIVE PRESSURE SENSOR BASED ON CR-DOPED V₂O₃ THIN FILM

This paper reports the fabrication and characterization of a piezoresistive pressure sensor based on Cr-doped V2O3 thin film (Cr-V2O3TF). It is the first time that the piezoresistive effect of single crystalline Cr-V2O3TF is demonstrated experimentally and implemented as a pressure sensor. The Cr-V2O3TF piezoresistors on the membrane experience a stress change caused by a pressure input. This leads to a gradual phase transition of the material from an insulating phase to a metallic phase and results in a resistivity change. This new piezoresistive mechanism opens up the potential for developing highly sensitive piezoresistive sensors based on phase transition.