Compact GaN Power ICs with Power HEMT, Gate Driver, Temperature Sensor, Current Sense-FET and Amplifier
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)(2023)
摘要
This work presents the design and characterization of modular and compact GaN power ICs with power HEMT, gate driver, temperature sensor, current sense-FET and amplifier. These GaN ICs give the user high flexibility and versatility due to the modular approach. With a circuit design where bond pads are placed over the active periphery circuits a low area requirement below 25% of the total chip area is achieved. The sense-FET of a 100 V GaN power IC was measured in a half-bridge configuration with external amplifier to readout the sense-FET up to 48 V, 3 A, 100 kHz in hard- and soft-switching operation. The current-voltage ratio is −0.38 V/A. The temperature coefficient of the temperature sensor is 0.0031/K and the amplifier has a peak gain of 44. Thus, these GaN ICs give a compact and versatile solution for power electronics.
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关键词
Gallium nitride,power integrated circuits,monolithic integrated circuits,driver circuits,gate drivers,temperature sensors,current measurement
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