Electrical conduction mechanism in multiferroic Gd doped GaFeO3

A detail analysis on the structural, morphological, dielectric, conductivity, ferroelectric, magnetic and electrical behaviour of Gd doped GaFeO3 prepared by mixed oxide method is presented. XRD analysis, by using Rietveld refinement method, validates that all the samples have single phase orthorhombic structure. Decrement in the grain size with rise in Gd content is found from FESEM analysis. The dispersive characteristic of dielectric constant is described by the Maxwell-Wagner model and Koop's theory. The value of epsilon r is found to increase with Gd content. The modified Debye formula is used to fit epsilon r with frequency data, which indicates the existence of more than one relaxation processes. The frequency dependant ac conductivity curve is found to obey Jonscher's power law and the conduction mechanism for all the samples is explained by of small polaron hopping (SPH) transport model. The modulus and impedance spectra confirms the presence of non-Debye type of relaxation. The presence of semicircular curves of complex impedance plot suggests the effect of grain boundary contri-bution to the conduction process for all the samples at low temperatures. The value of remanent polarization is found to fall with Gd content. From M-H loop, magnetisation at M (30kOe) is found to rise while non-saturation is found to decrease with Gd content and analysed on the basis of Law of Approach.