Investigation into the Temperature Effect on the Performance of CZTS(Se) Thin Film Solar Cells

The objective of this study is to examine the effect of temperature on the performance parameters of the kieserite quaternary semiconductor compounds CZTS, CZTSe, and CZTSSe. For the purpose of this study, a SCAPS-1D model has been used. P-MoS(Se)(2) is positioned between the Mo back contact and the absorber layer, acting as an interfacial layer. From the results of this study, it is clear that the p-MoS(Se)(2) interfacial layer facilitates the quasi-ohmic contact between the CZTS(Se) heterojunctions and the Mo heterojunctions. Consequently, the J-V characteristic is steeper as a result of this finding. We examined all structures from 250 K to 450 K in terms of the temperature dependence of open-circuit voltage (V-oc), short-circuit current (J(sc)), fill factor (FF), and power conversion efficiency (PCE). CZTSe-based solar cells have been found to perform best at high operating temperatures, according to a comparative study. Based on the voltage variation to temperature Delta V-oc/Delta T coefficients of the CZTS and CZTSe-based solar cells, it was found that the voltage variation to temperature coefficients were respectively -2.15 and -1.4 mV/K as a result of temperature changes.