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Toward High-Performance P-Type Two-Dimensional Field Effect Transistors: Contact Engineering, Scaling, and Doping.

Aaryan Oberoi,Ying Han,Sergei P. Stepanoff,Andrew Pannone,Yongwen Sun,Yu-Chuan Lin, Chen,Jeffrey R. Shallenberger,Da Zhou,Mauricio Terrones,Joan M. Redwing,Joshua A. Robinson,Douglas E. Wolfe, Yang,Saptarshi Das

ACS NANO（2023）

Cited 4|Views2
Key words
2D materials,strain,scaling,p-typedoping,WSe2,transistors
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