Selective Regrowth of InGaAs/InP MQWs on SOI for Telecom Band Emission
2022 IEEE Photonics Conference (IPC)(2022)
Abstract
We demonstrated selective regrowth of InGaAs/InP multi-quantum wells (MQWs) on silicon-on-insulator (SOI) wafers for telecom band emission. The MQWs growth was guided by regrowth templates fabricated on a monolithic InP/SOI platform. Flat (001) III-V surface with a roughness of 0.381 nm, QWs with strong photoluminescence (PL) emission at 1.55 $\mu$m, and narrow full-width-at-half-maximum (FWHM) of 73 meV were achieved.
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Key words
selective epitaxy,quantum well,optical communication
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