Selective Regrowth of InGaAs/InP MQWs on SOI for Telecom Band Emission

Jie Li,Ying Xue,Zhao Yan,Yu Han,Kei May Lau

2022 IEEE Photonics Conference (IPC)（2022）

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Abstract

We demonstrated selective regrowth of InGaAs/InP multi-quantum wells (MQWs) on silicon-on-insulator (SOI) wafers for telecom band emission. The MQWs growth was guided by regrowth templates fabricated on a monolithic InP/SOI platform. Flat (001) III-V surface with a roughness of 0.381 nm, QWs with strong photoluminescence (PL) emission at 1.55 $\mu$m, and narrow full-width-at-half-maximum (FWHM) of 73 meV were achieved.

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Key words

selective epitaxy,quantum well,optical communication

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