Comparative Study of 940 nm VCSELs Grown on Ge and GaAs Substrates

2022 IEEE Photonics Conference (IPC)(2022)

引用 0|浏览1
暂无评分
摘要
Results from an experimental comparison of like-for-like VCSELs grown on GaAs and Ge substrates are presented. Comparable performance, in terms of threshold current, device efficiency, and thermal management, is demonstrated.
更多
查看译文
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要