Frequency dependent electrical and dielectric properties of the Au/(RuO₂: PVC)/n-Si (MPS) structures

In this study, the electrical and dielectric characteristics of the Au/(RuO2:PVC)/n-Si structures were analyzed using the impedance spectroscopy method, including capacitance/conductance (C - G/omega) measurements in wide voltage and frequency ranges (+4 V, 5 kHz - 5 MHz) at room temperature. The main electrical parameters such as concentration of donor atoms (N-D), diffusion potential (V-D), depletion layer thickness (W-D), Fermi energy level (E-F), barrier height (phi(B)), and maximum electric field (E-m) were extracted for each measured frequency. The phi(B), W-D, and E-F values are increasing with increased frequency, while N-D and E-m exponentially decrease. The surfacestates (N-SS) were evaluated using the low-high-frequency capacitance technique. Furthermore, the basic dielectric parameters such as tangent-loss (tan delta), electrical conductivity (sigma(ac)), real and imaginary parts of epsilon*, electric-modulus (M*), and complex impedance (Z*) were investigated. The obtained results indicate that the N-SS, and RuO2:PVC organic interlayer are more effective on C and G/omega measurements.