Resistive Switching Properties of SnO₂ Nanowires Fabricated by Chemical Vapor Deposition

Abstract Resistive switching (RS) devices have great application prospects in emerging memory and neuromorphic fields, but the stability of the devices and the unclear RS mechanism restrain the relevant application. In this work, we construct a hydrogenated Au/SnO2 nanowire (NW)/Au device with two back-to-back Schottky diodes and investigate the RS characteristics in air and vacuum. We find that the I on/I off ratio increases from 20 to 104 when the reading voltage decreases from 3.1 to -1 V under the condition of electric field. Moreover, the rectification ratio can be up to 104 due to the oxygen ion migration modulated by the electric field. The nanodevice also shows non-volatile resistive memory characteristic. The RS mechanism is clarified based on the changes of the Schottky barrier width and height at the interface of Au/SnO2 NW/Au device. Our results provide a kind of strategy for designing high-performance memristive devices based on SnO2 NWs.