Effect of the doping compensation on the photoluminescence spectra of ZnO doped by nitrogen

Photoluminescence measurements have been carried out to investigate the effects of the doping compensation on the near band edge emission lines in the nitrogen doped ZnO thin films grown on silicon substrates by using ultrasonic spray pyrolysis method. The results of the PL spectra for the N-doped layers show that the peak positions of the near band edge emission lines shift to higher energy with increasing temperature within the low-temperature region. The radiative recombinations of the carriers are related to the band-tail states, and the temperature-dependent blueshifts are analyzed by using a Gaussian distribution of the charged impurities.